Documente tehnice
Specificatii
Marca
DiodesZetexTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
140 V
Maximum Emitter Base Voltage
160 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
10000
Maximum Base Emitter Saturation Voltage
1.9 V
Maximum Collector Base Voltage
160 V
Maximum Collector Emitter Saturation Voltage
1.2 V
Maximum Collector Cut-off Current
10µA
Inaltime
1.65mm
Latime
3.55mm
Maximum Power Dissipation
2 W
Temperatura minima de lucru
-55 °C
Dimensiuni
6.55 x 3.55 x 1.65mm
Temperatura maxima de lucru
+150 °C
Lungime
6.55mm
Tara de origine
China
Detalii produs
Darlington Transistors, Diodes Inc
Transistors, Diodes Inc
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,32
Buc. (Pe o rola de 1000) (fara TVA)
€ 0,381
Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 0,32
Buc. (Pe o rola de 1000) (fara TVA)
€ 0,381
Buc. (Pe o rola de 1000) (cu TVA)
1000
Documente tehnice
Specificatii
Marca
DiodesZetexTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
140 V
Maximum Emitter Base Voltage
160 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
10000
Maximum Base Emitter Saturation Voltage
1.9 V
Maximum Collector Base Voltage
160 V
Maximum Collector Emitter Saturation Voltage
1.2 V
Maximum Collector Cut-off Current
10µA
Inaltime
1.65mm
Latime
3.55mm
Maximum Power Dissipation
2 W
Temperatura minima de lucru
-55 °C
Dimensiuni
6.55 x 3.55 x 1.65mm
Temperatura maxima de lucru
+150 °C
Lungime
6.55mm
Tara de origine
China
Detalii produs