Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
700 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3 + Tab
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+9 V
Latime
3.55mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
6.55mm
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
High Voltage Transistors, Diodes Inc
Transistors, Diodes Inc
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P.O.A.
2500
P.O.A.
2500
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
700 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3 + Tab
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+9 V
Latime
3.55mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
6.55mm
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs