Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
60 V
Tip pachet
DI5060
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.5 W
Maximum Gate Source Voltage
±20 V
Latime
3.95mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+175 °C
Lungime
4.95mm
Typical Gate Charge @ Vgs
30.6 @ 10 V nC
Inaltime
1.05mm
Dimensiune celula
DMP
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalii produs
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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Buc. (Intr-un pachet de 10) (cu TVA)
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Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,476
Buc. (Intr-un pachet de 10) (cu TVA)
10
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
60 V
Tip pachet
DI5060
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.5 W
Maximum Gate Source Voltage
±20 V
Latime
3.95mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+175 °C
Lungime
4.95mm
Typical Gate Charge @ Vgs
30.6 @ 10 V nC
Inaltime
1.05mm
Dimensiune celula
DMP
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalii produs