Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
40 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
6.2mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.7mm
Typical Gate Charge @ Vgs
67 nC @ 10V
Inaltime
2.26mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Tara de origine
China
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Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
40 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
6.2mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.7mm
Typical Gate Charge @ Vgs
67 nC @ 10V
Inaltime
2.26mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Tara de origine
China