Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.3mm
Typical Gate Charge @ Vgs
13.7 nC @ 10 V
Latime
4.1mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.5mm
Detalii produs
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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Buc. (Livrat pe rola) (fara TVA)
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Buc. (Livrat pe rola) (cu TVA)
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Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.3mm
Typical Gate Charge @ Vgs
13.7 nC @ 10 V
Latime
4.1mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.5mm
Detalii produs