Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
20 V
Tip pachet
PowerDI3333-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.35mm
Typical Gate Charge @ Vgs
72 nC @ 4.5 V
Latime
3.35mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.85mm
Detalii produs
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,62
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,738
Buc. (Intr-un pachet de 25) (cu TVA)
25
€ 0,62
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,738
Buc. (Intr-un pachet de 25) (cu TVA)
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
25 - 375 | € 0,62 | € 15,50 |
400 - 975 | € 0,34 | € 8,50 |
1000+ | € 0,26 | € 6,50 |
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
20 V
Tip pachet
PowerDI3333-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.35mm
Typical Gate Charge @ Vgs
72 nC @ 4.5 V
Latime
3.35mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.85mm
Detalii produs