Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
9.1 A
Maximum Drain Source Voltage
12 V
Tip pachet
U-DFN2020
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.03 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.05mm
Typical Gate Charge @ Vgs
28.4 nC @ 5 V
Latime
2.05mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.58mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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P.O.A.
25
P.O.A.
25
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
9.1 A
Maximum Drain Source Voltage
12 V
Tip pachet
U-DFN2020
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.03 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.05mm
Typical Gate Charge @ Vgs
28.4 nC @ 5 V
Latime
2.05mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.58mm
Tara de origine
China
Detalii produs