Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
12 V
Tip pachet
U-DFN2020
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Typical Gate Charge @ Vgs
44 nC @ 8V
Temperatura maxima de lucru
+150 °C
Lungime
2.05mm
Latime
2.05mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
0.58mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Informatii indisponibile despre stoc
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3000
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Buc. (Pe o rola de 3000) (fara TVA)
€ 0,202
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
12 V
Tip pachet
U-DFN2020
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Typical Gate Charge @ Vgs
44 nC @ 8V
Temperatura maxima de lucru
+150 °C
Lungime
2.05mm
Latime
2.05mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
0.58mm
Temperatura minima de lucru
-55 °C
Tara de origine
China