Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
40 V
Tip pachet
TO-220AB
Dimensiune celula
DMN
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Temperatura maxima de lucru
+175 °C
Lungime
10.66mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Latime
9.01mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Inaltime
4.82mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
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€ 3,18
Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,784
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 3,18
Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,784
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 10 | € 3,18 | € 15,90 |
15 - 25 | € 2,42 | € 12,10 |
30+ | € 2,28 | € 11,40 |
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
40 V
Tip pachet
TO-220AB
Dimensiune celula
DMN
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Temperatura maxima de lucru
+175 °C
Lungime
10.66mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Latime
9.01mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Inaltime
4.82mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs