Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
900 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Latime
16.27mm
Number of Elements per Chip
1
Lungime
10.46mm
Typical Gate Charge @ Vgs
20.3 nC @ 10 V
Inaltime
4.9mm
Dimensiune celula
DMN90H2D2HCTI
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
900 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Latime
16.27mm
Number of Elements per Chip
1
Lungime
10.46mm
Typical Gate Charge @ Vgs
20.3 nC @ 10 V
Inaltime
4.9mm
Dimensiune celula
DMN90H2D2HCTI
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs