Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
407 mA
Maximum Drain Source Voltage
60 V
Tip pachet
X1-DFN1006
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Lungime
1.07mm
Typical Gate Charge @ Vgs
0.45 nC @ 4.5V
Latime
0.67mm
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Inaltime
0.48mm
Tara de origine
China
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Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
407 mA
Maximum Drain Source Voltage
60 V
Tip pachet
X1-DFN1006
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Lungime
1.07mm
Typical Gate Charge @ Vgs
0.45 nC @ 4.5V
Latime
0.67mm
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Inaltime
0.48mm
Tara de origine
China