Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
11 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Lungime
6.55mm
Typical Gate Charge @ Vgs
16 nC @ 10V
Latime
3.55mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Automotive Standard
AEC-Q101
Inaltime
1.65mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
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Buc. (Pe o rola de 2500) (fara TVA)
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Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
11 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Lungime
6.55mm
Typical Gate Charge @ Vgs
16 nC @ 10V
Latime
3.55mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Automotive Standard
AEC-Q101
Inaltime
1.65mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China