Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-323 (SC-70)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.2mm
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Temperatura minima de lucru
-65 °C
Detalii produs
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
P.O.A.
Buc. (Intr-un pachet de 25) (fara TVA)
Standard
25
P.O.A.
Buc. (Intr-un pachet de 25) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
25
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-323 (SC-70)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.2mm
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Temperatura minima de lucru
-65 °C
Detalii produs


