Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-363 (SC-88)
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Latime
1.35mm
Transistor Material
Si
Temperatura minima de lucru
-65 °C
Inaltime
1mm
Detalii produs
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
25
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
25
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-363 (SC-88)
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Latime
1.35mm
Transistor Material
Si
Temperatura minima de lucru
-65 °C
Inaltime
1mm
Detalii produs


