Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Tip pachet
U-DFN2020
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
2.05mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.05mm
Typical Gate Charge @ Vgs
13.3 nC @ 15 V
Inaltime
0.58mm
Frecventa minima de auto-rezonanta
-55 °C
Dimensiune celula
DMN3042LFDF
Forward Diode Voltage
1.2V
Detalii produs
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,12
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,143
Buc. (Intr-un pachet de 50) (cu TVA)
50
€ 0,12
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,143
Buc. (Intr-un pachet de 50) (cu TVA)
50
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Tip pachet
U-DFN2020
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
2.05mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.05mm
Typical Gate Charge @ Vgs
13.3 nC @ 15 V
Inaltime
0.58mm
Frecventa minima de auto-rezonanta
-55 °C
Dimensiune celula
DMN3042LFDF
Forward Diode Voltage
1.2V
Detalii produs