Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Tip pachet
U-DFN2020
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
2.05mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.05mm
Typical Gate Charge @ Vgs
13.2 nC @ 15 V
Inaltime
0.58mm
Dimensiune celula
DMN3025LFDF
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Detalii produs
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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P.O.A.
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P.O.A.
50
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Tip pachet
U-DFN2020
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
2.05mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.05mm
Typical Gate Charge @ Vgs
13.2 nC @ 15 V
Inaltime
0.58mm
Dimensiune celula
DMN3025LFDF
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Detalii produs