Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
30 V
Tip pachet
PDI3333
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.15mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
3.15mm
Typical Gate Charge @ Vgs
21 nC @ 15 V
Inaltime
0.8mm
Dimensiune celula
DMN3016LDV
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Detalii produs
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
30 V
Tip pachet
PDI3333
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.15mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
3.15mm
Typical Gate Charge @ Vgs
21 nC @ 15 V
Inaltime
0.8mm
Dimensiune celula
DMN3016LDV
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Detalii produs