Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
900 mA
Maximum Drain Source Voltage
20 V
Tip pachet
X1-DFN1212
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
890 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Latime
1.25mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
1.25mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Inaltime
0.48mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,04
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,048
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,04
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,048
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
900 mA
Maximum Drain Source Voltage
20 V
Tip pachet
X1-DFN1212
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
890 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Latime
1.25mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
1.25mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Inaltime
0.48mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China