Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Tip pachet
X2-DFN1006
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Latime
0.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
1.05mm
Typical Gate Charge @ Vgs
1.3 nC @ 10 V
Inaltime
0.35mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,04
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,048
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,04
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,048
Buc. (Pe o rola de 3000) (cu TVA)
3000
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
3000 - 6000 | € 0,04 | € 120,00 |
9000 - 12000 | € 0,03 | € 90,00 |
15000+ | € 0,03 | € 90,00 |
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Tip pachet
X2-DFN1006
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Latime
0.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
1.05mm
Typical Gate Charge @ Vgs
1.3 nC @ 10 V
Inaltime
0.35mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China