Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-26
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
650 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Latime
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Lungime
3.1mm
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
1.3mm
Tara de origine
China
Detalii produs
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
P.O.A.
Each (Supplied as a Tape) (fara TVA)
Standard
25
P.O.A.
Each (Supplied as a Tape) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
25
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-26
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
650 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Latime
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Lungime
3.1mm
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
1.3mm
Tara de origine
China
Detalii produs


