Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-323
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.2mm
Typical Gate Charge @ Vgs
5.4 nC @ 4.5 V
Latime
1.35mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,18
Buc. (Intr-un pachet de 100) (fara TVA)
€ 0,214
Buc. (Intr-un pachet de 100) (cu TVA)
100
€ 0,18
Buc. (Intr-un pachet de 100) (fara TVA)
€ 0,214
Buc. (Intr-un pachet de 100) (cu TVA)
100
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-323
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.2mm
Typical Gate Charge @ Vgs
5.4 nC @ 4.5 V
Latime
1.35mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs