Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Dimensiune celula
DMN2056U
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
940 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
4.3 nC @ 10 V
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,34
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,405
Buc. (Intr-un pachet de 50) (cu TVA)
50
€ 0,34
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,405
Buc. (Intr-un pachet de 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
50 - 450 | € 0,34 | € 17,00 |
500 - 950 | € 0,15 | € 7,50 |
1000 - 1950 | € 0,11 | € 5,50 |
2000 - 2950 | € 0,11 | € 5,50 |
3000+ | € 0,09 | € 4,50 |
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Dimensiune celula
DMN2056U
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
940 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
4.3 nC @ 10 V
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs