Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
5.9 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3mm
Typical Gate Charge @ Vgs
6.7 nC @ 4.5 V
Latime
1.4mm
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Detalii produs
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 14,50
€ 0,29 Buc. (Intr-un pachet de 50) (fara TVA)
€ 17,54
€ 0,351 Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
€ 14,50
€ 0,29 Buc. (Intr-un pachet de 50) (fara TVA)
€ 17,54
€ 0,351 Buc. (Intr-un pachet de 50) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 50 - 550 | € 0,29 | € 14,50 |
| 600 - 1450 | € 0,19 | € 9,50 |
| 1500+ | € 0,14 | € 7,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
5.9 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3mm
Typical Gate Charge @ Vgs
6.7 nC @ 4.5 V
Latime
1.4mm
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Detalii produs


