Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
100 V
Tip pachet
PowerDI3333-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3.35mm
Typical Gate Charge @ Vgs
25.2 nC @ 10 V
Inaltime
0.8mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.77V
Tara de origine
China
Detalii produs
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,30
Buc. (Pe o rola de 2000) (fara TVA)
€ 0,357
Buc. (Pe o rola de 2000) (cu TVA)
2000
€ 0,30
Buc. (Pe o rola de 2000) (fara TVA)
€ 0,357
Buc. (Pe o rola de 2000) (cu TVA)
2000
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
100 V
Tip pachet
PowerDI3333-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3.35mm
Typical Gate Charge @ Vgs
25.2 nC @ 10 V
Inaltime
0.8mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.77V
Tara de origine
China
Detalii produs