Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
71 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
9.1 nC @ 4.5 V
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Automotive Standard
AEC-Q101
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,09
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,107
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,09
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,107
Buc. (Pe o rola de 3000) (cu TVA)
3000
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
3000 - 6000 | € 0,09 | € 270,00 |
9000 - 12000 | € 0,08 | € 240,00 |
15000+ | € 0,08 | € 240,00 |
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
71 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
9.1 nC @ 4.5 V
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Automotive Standard
AEC-Q101
Tara de origine
China