Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Dimensiune celula
DMG2302UK
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
2.8 nC @ 10 V
Latime
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,16
Buc. (Intr-un pachet de 100) (fara TVA)
€ 0,19
Buc. (Intr-un pachet de 100) (cu TVA)
100
€ 0,16
Buc. (Intr-un pachet de 100) (fara TVA)
€ 0,19
Buc. (Intr-un pachet de 100) (cu TVA)
100
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
100 - 400 | € 0,16 | € 16,00 |
500 - 900 | € 0,13 | € 13,00 |
1000 - 1900 | € 0,12 | € 12,00 |
2000 - 2900 | € 0,11 | € 11,00 |
3000+ | € 0,09 | € 9,00 |
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Dimensiune celula
DMG2302UK
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
2.8 nC @ 10 V
Latime
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs