Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
640 mA, 870 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-563
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
1.3 Ω, 700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
530 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Latime
1.25mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.6mm
Tara de origine
China
Detalii produs
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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P.O.A.
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P.O.A.
50
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
640 mA, 870 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-563
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
1.3 Ω, 700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
530 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Latime
1.25mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.6mm
Tara de origine
China
Detalii produs