Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
6.8 A, 9 A
Maximum Drain Source Voltage
30 V
Tip pachet
PDI3333
Dimensiune celula
DMC3016LNS
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
20 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4 V
Minimum Gate Threshold Voltage
1.2 V, 1.4 V
Maximum Power Dissipation
2 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Latime
3.15mm
Number of Elements per Chip
2
Forward Diode Voltage
1.2V
Inaltime
0.8mm
Temperatura minima de lucru
-55 °C
Detalii produs
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
6.8 A, 9 A
Maximum Drain Source Voltage
30 V
Tip pachet
PDI3333
Dimensiune celula
DMC3016LNS
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
20 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4 V
Minimum Gate Threshold Voltage
1.2 V, 1.4 V
Maximum Power Dissipation
2 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Latime
3.15mm
Number of Elements per Chip
2
Forward Diode Voltage
1.2V
Inaltime
0.8mm
Temperatura minima de lucru
-55 °C
Detalii produs