Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,31
Buc. (Livrat pe rola) (fara TVA)
€ 0,369
Buc. (Livrat pe rola) (cu TVA)
50
€ 0,31
Buc. (Livrat pe rola) (fara TVA)
€ 0,369
Buc. (Livrat pe rola) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
50 - 550 | € 0,31 | € 15,50 |
600 - 1450 | € 0,13 | € 6,50 |
1500+ | € 0,10 | € 5,00 |
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs