Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexTimp montare
Surface Mount
Tip pachet
SOD-323
Maximum Continuous Forward Current
1A
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Single
Rectifier Type
Schottky Diode
Diode Type
Schottky
Numar pini
2
Maximum Forward Voltage Drop
550mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
5.5A
Tara de origine
China
Detalii produs
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
€ 13,50
€ 0,09 Buc. (Livrat pe rola) (fara TVA)
€ 16,34
€ 0,109 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
150
€ 13,50
€ 0,09 Buc. (Livrat pe rola) (fara TVA)
€ 16,34
€ 0,109 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
150
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 150 - 725 | € 0,09 | € 2,25 |
| 750 - 1475 | € 0,08 | € 2,00 |
| 1500+ | € 0,07 | € 1,75 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexTimp montare
Surface Mount
Tip pachet
SOD-323
Maximum Continuous Forward Current
1A
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Single
Rectifier Type
Schottky Diode
Diode Type
Schottky
Numar pini
2
Maximum Forward Voltage Drop
550mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
5.5A
Tara de origine
China
Detalii produs
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.


