Documente tehnice
Specificatii
Memory Size
64kbit
Organisation
8K x 8 bit
Interfata
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Montare
Surface Mount
Tip pachet
SOIC
Numar pini
28
Dimensiuni
18.11 x 7.62 x 2.37mm
Maximum Operating Supply Voltage
5.5 V
Temperatura maxima de lucru
+85 °C
Number of Words
8K
Frecventa minima de auto-rezonanta
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Detalii produs
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Documente tehnice
Specificatii
Memory Size
64kbit
Organisation
8K x 8 bit
Interfata
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Montare
Surface Mount
Tip pachet
SOIC
Numar pini
28
Dimensiuni
18.11 x 7.62 x 2.37mm
Maximum Operating Supply Voltage
5.5 V
Temperatura maxima de lucru
+85 °C
Number of Words
8K
Frecventa minima de auto-rezonanta
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Detalii produs
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.