Documente tehnice
Specificatii
Memory Size
8Mbit
Organisation
1024K x 8 bit
Number of Words
1024K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Montare
Surface Mount
Tip pachet
TSOP
Numar pini
44
Dimensiuni
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
3.6 V
Inaltime
1.04mm
Temperatura maxima de lucru
+85 °C
Lungime
18.51mm
Latime
10.26mm
Frecventa minima de auto-rezonanta
-40 °C
Minimum Operating Supply Voltage
2.2 V
Detalii produs
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
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Documente tehnice
Specificatii
Memory Size
8Mbit
Organisation
1024K x 8 bit
Number of Words
1024K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Montare
Surface Mount
Tip pachet
TSOP
Numar pini
44
Dimensiuni
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
3.6 V
Inaltime
1.04mm
Temperatura maxima de lucru
+85 °C
Lungime
18.51mm
Latime
10.26mm
Frecventa minima de auto-rezonanta
-40 °C
Minimum Operating Supply Voltage
2.2 V
Detalii produs
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.