Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Memory Size
8Mbit
Organisation
1M x 8 bit
Number of Words
1M
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Timp montare
Surface Mount
Tip pachet
TSOP
Numar pini
44
Dimensiuni
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
5.5 V
Inaltime
1.04mm
Latime
10.26mm
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
4.5 V
Temperatura maxima de lucru
+85 °C
Lungime
18.51mm
Tara de origine
Philippines
Detalii produs
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
P.O.A.
Standard
1
P.O.A.
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Memory Size
8Mbit
Organisation
1M x 8 bit
Number of Words
1M
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Timp montare
Surface Mount
Tip pachet
TSOP
Numar pini
44
Dimensiuni
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
5.5 V
Inaltime
1.04mm
Latime
10.26mm
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
4.5 V
Temperatura maxima de lucru
+85 °C
Lungime
18.51mm
Tara de origine
Philippines
Detalii produs
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.


