Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Memory Size
8Mbit
Organisation
512k x 16 bit
Number of Words
512K
Number of Bits per Word
16bit
Maximum Random Access Time
45ns
Address Bus Width
16bit
Clock Frequency
1MHz
Low Power
Yes
Timp montare
Surface Mount
Tip pachet
TSOP
Numar pini
44
Dimensiuni
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
5.5 V
Inaltime
1.04mm
Temperatura maxima de lucru
+85 °C
Lungime
18.51mm
Latime
10.26mm
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
4.5 V
Tara de origine
United States
Detalii produs
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
P.O.A.
Impachetare pentru productie (Tava)
1
P.O.A.
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tava)
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Memory Size
8Mbit
Organisation
512k x 16 bit
Number of Words
512K
Number of Bits per Word
16bit
Maximum Random Access Time
45ns
Address Bus Width
16bit
Clock Frequency
1MHz
Low Power
Yes
Timp montare
Surface Mount
Tip pachet
TSOP
Numar pini
44
Dimensiuni
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
5.5 V
Inaltime
1.04mm
Temperatura maxima de lucru
+85 °C
Lungime
18.51mm
Latime
10.26mm
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
4.5 V
Tara de origine
United States
Detalii produs
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.


