Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Memory Size
4Mbit
Organisation
512K x 8 bit
Number of Words
512K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Timp montare
Surface Mount
Tip pachet
TSOP
Numar pini
32
Dimensiuni
21.08 x 10.29 x 1.05mm
Inaltime
1.05mm
Maximum Operating Supply Voltage
5.5 V
Minimum Operating Supply Voltage
4.5 V
Temperatura maxima de lucru
+85 °C
Lungime
21.08mm
Latime
10.29mm
Temperatura minima de lucru
-40 °C
Tara de origine
Taiwan, Province Of China
Detalii produs
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
P.O.A.
Impachetare pentru productie (Tava)
1
P.O.A.
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tava)
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Memory Size
4Mbit
Organisation
512K x 8 bit
Number of Words
512K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Timp montare
Surface Mount
Tip pachet
TSOP
Numar pini
32
Dimensiuni
21.08 x 10.29 x 1.05mm
Inaltime
1.05mm
Maximum Operating Supply Voltage
5.5 V
Minimum Operating Supply Voltage
4.5 V
Temperatura maxima de lucru
+85 °C
Lungime
21.08mm
Latime
10.29mm
Temperatura minima de lucru
-40 °C
Tara de origine
Taiwan, Province Of China
Detalii produs
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.


