Documente tehnice
Specificatii
Memory Size
1Mbit
Organisation
128K x 8 bit
Number of Words
128K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Montare
Surface Mount
Tip pachet
STSOP
Numar pini
32
Dimensiuni
11.9 x 8.1 x 1.05mm
Maximum Operating Supply Voltage
3.6 V
Inaltime
1.05mm
Temperatura maxima de lucru
+85 °C
Lungime
11.9mm
Latime
8.1mm
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2.2 V
Detalii produs
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
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P.O.A.
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Documente tehnice
Specificatii
Memory Size
1Mbit
Organisation
128K x 8 bit
Number of Words
128K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Montare
Surface Mount
Tip pachet
STSOP
Numar pini
32
Dimensiuni
11.9 x 8.1 x 1.05mm
Maximum Operating Supply Voltage
3.6 V
Inaltime
1.05mm
Temperatura maxima de lucru
+85 °C
Lungime
11.9mm
Latime
8.1mm
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2.2 V
Detalii produs
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.