Documente tehnice
Specificatii
Marca
BournsTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
0.2mA
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Latime
4.7mm
Temperatura minima de lucru
-65 °C
Inaltime
9.3mm
Dimensiuni
10.4 x 4.7 x 9.3mm
P.O.A.
1
P.O.A.
1
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Documente tehnice
Specificatii
Marca
BournsTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
0.2mA
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Latime
4.7mm
Temperatura minima de lucru
-65 °C
Inaltime
9.3mm
Dimensiuni
10.4 x 4.7 x 9.3mm