HMC617LP3E Analog Devices, RF Amplifier Low Noise, 16 dB 1.2 GHz, 16-Pin QFN
Documente tehnice
Specificatii
Marca
Analog DevicesAmplifier Type
Low Noise
Typical Power Gain
16 dB
Typical Output Power
21dBm
Typical Noise Figure
0.6dB
Numar canale pe cip
1
Maximum Operating Frequency
1.2 GHz
Montare
Surface Mount
Tip pachet
QFN
Numar pini
16
Dimensiuni
3.1 x 3.1 x 1mm
Inaltime
1mm
Lungime
3.1mm
Dimensiune celula
Hittite
Frecventa minima de auto-rezonanta
-40 °C
Temperatura maxima de lucru
+85 °C
Maximum Operating Supply Voltage
5 V
Latime
3.1mm
Minimum Operating Supply Voltage
3 V
Detalii produs
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.
Radio Frequency (RF) Amplifiers, Analog Devices
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Documente tehnice
Specificatii
Marca
Analog DevicesAmplifier Type
Low Noise
Typical Power Gain
16 dB
Typical Output Power
21dBm
Typical Noise Figure
0.6dB
Numar canale pe cip
1
Maximum Operating Frequency
1.2 GHz
Montare
Surface Mount
Tip pachet
QFN
Numar pini
16
Dimensiuni
3.1 x 3.1 x 1mm
Inaltime
1mm
Lungime
3.1mm
Dimensiune celula
Hittite
Frecventa minima de auto-rezonanta
-40 °C
Temperatura maxima de lucru
+85 °C
Maximum Operating Supply Voltage
5 V
Latime
3.1mm
Minimum Operating Supply Voltage
3 V
Detalii produs
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.