HMC326MS8GE Analog Devices, RF Amplifier MMIC, 21 dB 4.5 GHz, 8-Pin MSOP
Documente tehnice
Specificatii
Marca
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
21 dB
Typical Output Power
23.5dBm
Typical Noise Figure
5dB
Numar canale pe cip
1
Maximum Operating Frequency
4.5 GHz
Timp montare
Surface Mount
Tip pachet
MSOP
Numar pini
8
Dimensiuni
3.1 x 3.1 x 0.95mm
Inaltime
0.95mm
Lungime
3.1mm
Maximum Operating Supply Voltage
5 V
Latime
3.1mm
Dimensiune celula
Hittite
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+85 °C
Tara de origine
Taiwan, Province Of China
Detalii produs
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.
Radio Frequency (RF) Amplifiers, Analog Devices
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P.O.A.
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P.O.A.
50
Documente tehnice
Specificatii
Marca
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
21 dB
Typical Output Power
23.5dBm
Typical Noise Figure
5dB
Numar canale pe cip
1
Maximum Operating Frequency
4.5 GHz
Timp montare
Surface Mount
Tip pachet
MSOP
Numar pini
8
Dimensiuni
3.1 x 3.1 x 0.95mm
Inaltime
0.95mm
Lungime
3.1mm
Maximum Operating Supply Voltage
5 V
Latime
3.1mm
Dimensiune celula
Hittite
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+85 °C
Tara de origine
Taiwan, Province Of China
Detalii produs
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.