HMC311LP3E Analog Devices, RF Amplifier MMIC, 14.5 dB 6 GHz, 16-Pin SMT
Documente tehnice
Specificatii
Marca
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
14.5 dB
Typical Output Power
15.5dBm
Typical Noise Figure
4.5dB
Numar canale pe cip
1
Maximum Operating Frequency
6 GHz
Montare
Surface Mount
Tip pachet
SMT
Numar pini
16
Dimensiuni
3.1 x 3.1 x 1mm
Inaltime
1mm
Lungime
3.1mm
Latime
3.1mm
Dimensiune celula
Hittite
Frecventa minima de auto-rezonanta
-40 °C
Temperatura maxima de lucru
+85 °C
Maximum Operating Supply Voltage
5 V
Tara de origine
Malaysia
Detalii produs
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.
Radio Frequency (RF) Amplifiers, Analog Devices
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P.O.A.
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P.O.A.
50
Documente tehnice
Specificatii
Marca
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
14.5 dB
Typical Output Power
15.5dBm
Typical Noise Figure
4.5dB
Numar canale pe cip
1
Maximum Operating Frequency
6 GHz
Montare
Surface Mount
Tip pachet
SMT
Numar pini
16
Dimensiuni
3.1 x 3.1 x 1mm
Inaltime
1mm
Lungime
3.1mm
Latime
3.1mm
Dimensiune celula
Hittite
Frecventa minima de auto-rezonanta
-40 °C
Temperatura maxima de lucru
+85 °C
Maximum Operating Supply Voltage
5 V
Tara de origine
Malaysia
Detalii produs
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.