Documente tehnice
Specificatii
Marca
ams OSRAMSpectrums Detected
Infrared
Timp de scadere tipic
15µs
Timp de crestere tipic
15µs
Number of Channels
1
Maximum Light Current
9500µA
Maximum Dark Current
20 (≤ 100)nA
Angle of Half Sensitivity
±15 °
Polarity
NPN
Number of Pins
3
Montare
Through Hole
Tip pachet
TO-18
Dimensiuni
4.8 (Dia.) x 6.2mm
Collector Current
50mA
Minimum Wavelength Detected
450nm
Maximum Wavelength Detected
1100nm
Diametru
4.8mm
Spectral Range of Sensitivity
450 → 1100 nm
Inaltime
6.2mm
Saturation Voltage
240mV
Tara de origine
China
Detalii produs
Phototransistor TO18 Package
Phototransistors, OSRAM Opto Semiconductors
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
1000
P.O.A.
1000
Documente tehnice
Specificatii
Marca
ams OSRAMSpectrums Detected
Infrared
Timp de scadere tipic
15µs
Timp de crestere tipic
15µs
Number of Channels
1
Maximum Light Current
9500µA
Maximum Dark Current
20 (≤ 100)nA
Angle of Half Sensitivity
±15 °
Polarity
NPN
Number of Pins
3
Montare
Through Hole
Tip pachet
TO-18
Dimensiuni
4.8 (Dia.) x 6.2mm
Collector Current
50mA
Minimum Wavelength Detected
450nm
Maximum Wavelength Detected
1100nm
Diametru
4.8mm
Spectral Range of Sensitivity
450 → 1100 nm
Inaltime
6.2mm
Saturation Voltage
240mV
Tara de origine
China
Detalii produs