Documente tehnice
Specificatii
Marca
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
1000 V
Dimensiune celula
C3M
Tip pachet
TO-247-4
Timp montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113.5 W
Maximum Gate Source Voltage
-8 V, +19 V
Transistor Material
SiC
Lungime
16.13mm
Typical Gate Charge @ Vgs
35 nC @ 15 V, 35 nC @ 4 V
Temperatura maxima de lucru
+150 °C
Latime
5.21mm
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
4.8V
Inaltime
23.6mm
Detalii produs
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
MOSFET Transistors, Cree Inc.
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Documente tehnice
Specificatii
Marca
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
1000 V
Dimensiune celula
C3M
Tip pachet
TO-247-4
Timp montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113.5 W
Maximum Gate Source Voltage
-8 V, +19 V
Transistor Material
SiC
Lungime
16.13mm
Typical Gate Charge @ Vgs
35 nC @ 15 V, 35 nC @ 4 V
Temperatura maxima de lucru
+150 °C
Latime
5.21mm
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
4.8V
Inaltime
23.6mm
Detalii produs