Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
20 V
Tip pachet
PowerPAK 1212-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Latime
3.4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.8mm
Detalii produs
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,27
Buc. (Livrat pe rola) (fara TVA)
€ 0,321
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
20
€ 0,27
Buc. (Livrat pe rola) (fara TVA)
€ 0,321
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
20
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
20 V
Tip pachet
PowerPAK 1212-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Latime
3.4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.8mm
Detalii produs