Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
100 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
44.4 nC @ 10 V
Latime
4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.5mm
Detalii produs
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
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€ 0,916
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
5
€ 0,77
Buc. (Livrat pe rola) (fara TVA)
€ 0,916
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
5
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
100 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
44.4 nC @ 10 V
Latime
4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.5mm
Detalii produs