Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Lungime
3.04mm
Typical Gate Charge @ Vgs
14 nC @ 8 V
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.02mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,41
Buc. (Livrat pe rola) (fara TVA)
€ 0,488
Buc. (Livrat pe rola) (cu TVA)
20
€ 0,41
Buc. (Livrat pe rola) (fara TVA)
€ 0,488
Buc. (Livrat pe rola) (cu TVA)
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
20 - 180 | € 0,41 | € 8,20 |
200 - 480 | € 0,30 | € 6,00 |
500 - 980 | € 0,27 | € 5,40 |
1000 - 1980 | € 0,23 | € 4,60 |
2000+ | € 0,20 | € 4,00 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Lungime
3.04mm
Typical Gate Charge @ Vgs
14 nC @ 8 V
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.02mm
Tara de origine
China
Detalii produs