Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-323 (SC-70)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
4.3 nC @ 4.5 V
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-50 °C
Inaltime
1mm
Detalii produs
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
Impachetare pentru productie (Rola)
50
P.O.A.
Impachetare pentru productie (Rola)
50
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-323 (SC-70)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
4.3 nC @ 4.5 V
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-50 °C
Inaltime
1mm
Detalii produs