N-channel MOSFET,IRFR110 4.3A 100V 75pcs

Marca

Channel Type

N

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

100 V

Tip pachet

DPAK

Timp montare

Surface Mount

Numar pini

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Temperatura maxima de lucru

+150 °C

Lungime

6.73mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Latime

6.22mm

Transistor Material

Si

Temperatura minima de lucru

-55 °C

Inaltime

2.39mm