Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
150 V
Tip pachet
SOP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
10.6 nC @ 10 V
Lungime
5mm
Inaltime
0.95mm
Forward Diode Voltage
1.2V
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P.O.A.
5000
P.O.A.
5000
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
150 V
Tip pachet
SOP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
10.6 nC @ 10 V
Lungime
5mm
Inaltime
0.95mm
Forward Diode Voltage
1.2V