Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
112 A
Maximum Drain Source Voltage
120 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
168 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.45mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.16mm
Typical Gate Charge @ Vgs
69 nC @ 10 V
Inaltime
15.1mm
Serie
U-MOSVIII-H
Forward Diode Voltage
1.2V
Detalii produs
MOSFET Transistors, Toshiba
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Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
112 A
Maximum Drain Source Voltage
120 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
168 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.45mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.16mm
Typical Gate Charge @ Vgs
69 nC @ 10 V
Inaltime
15.1mm
Serie
U-MOSVIII-H
Forward Diode Voltage
1.2V
Detalii produs