Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
NexFET
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Latime
4.7mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Inaltime
16.51mm
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii indisponibile despre stoc
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Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,737
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
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25 - 45 | € 1,10 | € 5,50 |
50+ | € 1,07 | € 5,35 |
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
NexFET
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Latime
4.7mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Inaltime
16.51mm
Detalii produs